Reflection symmetric ballistic microstructures: Quantum transport properties
نویسندگان
چکیده
منابع مشابه
QUANTUM TRANSPORT IN MICROSTRUCTURES Daniel
Advanced microfabrication techniques allow production of experimental systems as narrow as 20 nm for study of electron transport at low temperatures, ~IK. Fine wires in metals, Si-MOS inversion layers, and GaAs modulation-doped heterostructure layers have been studied. Metal rings of diameter ~I ~m have also been studied. New electron interference effects have been discovered in these systems, ...
متن کاملQuantum Symmetric Pairs and the Reflection Equation
It is shown that central elements in G. Letzter’s quantum group analogs of symmetric pairs lead to solutions of the reflection equation. This clarifies the relation between Letzter’s approach to quantum symmetric pairs and the approach taken by M. Noumi, T. Sugitani, and M. Dijkhuizen. We develop general tools to show that a Noumi-Sugitani-Dijkhuizen type construction of quantum symmetric pairs...
متن کاملBallistic spin transport without net charge transport in quantum wells
We demonstrate the ballistic transport of electron spin in the absence of net transport of electron charge. Spin-up electrons move in one direction, while an equal number of spin-down electrons move with the same velocities in the opposite direction, yielding no net charge motion. This effect, also referred to as a ‘pure’ spin current, results from the quantum mechanical interference of the tra...
متن کاملQuantum transport through ballistic cavities: soft vs hard quantum chaos
We study transport through a two-dimensional billiard attached to two infinite leads by numerically calculating the Landauer conductance and the Wigner time delay. In the generic case of a mixed phase space we find a power-law distribution of resonance widths and a power-law dependence of conductance increments apparently reflecting the classical dwell time exponent, in striking difference to t...
متن کاملSmooth-disorder effects in ballistic microstructures.
We analyze the eeect of weak residual disorder in microstructures deened on high-mobility heterojunctions, where the classical electron motion is ballistic. We parameterize the disorder by its correlation length and the elastic mean-free-path l, which can be estimated from microscopic models. For the experimentally relevant case in which is not negligible with respect to the size of the microst...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical Review B
سال: 1996
ISSN: 0163-1829,1095-3795
DOI: 10.1103/physrevb.54.r14297